参数项参数值
参数项参数值
Typical Delay Time55 ns
ConfigurationHalf-Bridge
Vgs th - Gate-Source Threshold Voltage1.6 V
TechnologySiC
Id - Continuous Drain Current250 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 6 V, 22 V
Typical Turn-On Delay Time55 ns
Typical Turn-Off Delay Time195 ns
Package / CaseModule
Mounting StyleScrew Mount
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
ProductPower Semiconductor Modules
Fall Time70 ns
PackagingCut Tape
PackagingReel
Unit Weight1.274 lbs
ImageROHM Semiconductor BSM250D17P2E004
Pd - Power Dissipation1800 W
RoHS Details
SeriesBSMx
Factory Pack Quantity4
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Vds - Drain-Source Breakdown Voltage1700 V
Product TypeDiscrete Semiconductor Modules
Product CategoryDiscrete Semiconductor Modules
SubcategoryDiscrete Semiconductor Modules
Rise Time55 ns
DescriptionDiscrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module
USHTS8541500080
TypeHalf Bridge Module
Moisture Sensitivity Level1 (Unlimited)