参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO120 V
ConfigurationSingle
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current1 A
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO5 V
KRHTS8541219000
CNHTS8541210000
Collector-Emitter Saturation Voltage0.2 V
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
DC Collector/Base Gain hfe Min80
BrandDiodes Incorporated
MXHTS85412999
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
RoHS Details
TARIC8541290000
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT BIPOLAR TRANS NPN
ImageDiodes Incorporated DSS8110Y-7
Factory Pack Quantity3000
SeriesDSS8110
Product CategoryBipolar Transistors - BJT
Unit Weight0.000265 oz
USHTS8541210075
Pd - Power Dissipation625 mW
Moisture Sensitivity Level1 (Unlimited)