参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO120 V
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
CNHTS8541210000
Collector-Emitter Saturation Voltage0.2 V
KRHTS8541219000
DC Collector/Base Gain hfe Min80
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS8110Y-7
Factory Pack Quantity3000
SeriesDSS8110
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT BIPOLAR TRANS NPN
USHTS8541210075
Unit Weight0.000265 oz
Pd - Power Dissipation625 mW
Moisture Sensitivity Level1 (Unlimited)