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IPB025N10N3GATMA1
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041263665
描述：Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min100 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current180 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time34 ns
Rds On - Drain-Source Resistance2 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time84 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge206 nC
Package / CaseTO-263-7
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time28 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
ImageInfineon Technologies IPB025N10N3GATMA1
RoHS Details
Unit Weight0.056438 oz
SeriesOptiMOS 3
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation300 W
BrandInfineon Technologies
Part # AliasesIPB025N10N3 G SP000469888
Product CategoryMOSFET
ManufacturerInfineon
SubcategoryMOSFETs
DescriptionMOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
USHTS8541290095
Number of Channels1 Channel
Rise Time58 ns
Moisture Sensitivity Level1 (Unlimited)