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FQD2N100TM
厂牌：onsemi
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041272695
描述：Trans MOSFET N-CH 1KV 1.6A 3-Pin(2+Tab) DPAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1.9 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance7.1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge15.5 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541210000
CAHTS8541290000
Channel ModeEnhancement
Fall Time35 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.017284 oz
RoHS Details
SeriesFQD2N100
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FQD2N100TM
Pd - Power Dissipation2.5 W
Product CategoryMOSFET
Part # AliasesFQD2N100TM_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage1 kV
DescriptionMOSFET 1000V N-Channel QFET
Number of Channels1 Channel
Rise Time30 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)