参数项参数值
参数项参数值
Forward Transconductance - Min9.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current5.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.2 ns
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.4 ns
Width1.3 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Qg - Gate Charge2.6 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time4.4 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRLML0030TRPBF
TARIC8541290000
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.3 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 30V 5.2A 28mOhm 3.6nC Qg
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Rise Time4.4 ns
Moisture Sensitivity Level1 (Unlimited)