参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max25 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min85
Width3.93 mm
Height4.7 mm
Length4.7 mm
Package / CaseTO-92-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingBulk
Unit Weight0.006314 oz
SeriesSS8050
Pd - Power Dissipation1 W
BrandON Semiconductor / Fairchild
Part # AliasesSS8050DBU_NL
ImageON Semiconductor / Fairchild SS8050DBU
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN/40V/1.5A
Moisture Sensitivity LevelNot Applicable