参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Height1.75 mm
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
Rds On - Drain-Source Resistance3.3 mOhms
RoHS Details
Package / CaseSO-8
Factory Pack Quantity2500
ImageVishay Semiconductors SI4154DY-T1-GE3
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width3.9 mm
Maximum Operating Temperature+ 150 C
BrandVishay Semiconductors
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
SubcategoryMOSFETs
DescriptionMOSFET 40V Vds 20V Vgs SO-8
Product CategoryMOSFET
Qg - Gate Charge105 nC
MXHTS85412101
SeriesSI4
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4154DY-GE3
Pd - Power Dissipation7.8 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)