参数项参数值
参数项参数值
Forward Transconductance - Min1.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current700 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time1.6 ns
Width1.4 mm
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time5.9 ns
Height1.02 mm
Length3.04 mm
MXHTS85412999
KRHTS8541219000
Qg - Gate Charge3.5 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMP10A
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET P-Ch 100 Volt 0.7A
TARIC8541290000
ImageDiodes Incorporated ZXMP10A13FTA
Product CategoryMOSFET
Fall Time3.3 ns
RoHS Details
Unit Weight0.000282 oz
SubcategoryMOSFETs
Pd - Power Dissipation806 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time2.1 ns