参数项参数值
参数项参数值
Forward Transconductance - Min70 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Height1.04 mm
Length6.15 mm
JPHTS8541290100
Typical Turn-On Delay Time14 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance7.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
RoHS Details
Package / CasePowerPAK-SO-8
Factory Pack Quantity3000
ImageVishay Semiconductors SIR462DP-T1-GE3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Width5.15 mm
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge20 nC
MXHTS85412999
SeriesSIR
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
Fall Time9 ns
CNHTS8541290000
Part # AliasesSIR462DP-GE3
Pd - Power Dissipation41.7 W
TradenameTrenchFET, PowerPAK
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)