参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current12.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time27 ns
Width5 mm
Height1.1 mm
Length6 mm
MXHTS85412999
Qg - Gate Charge55 nC
KRHTS8541299000
Package / CasePower-56-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time7 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541100000
SeriesFDMS86101
BrandON Semiconductor / Fairchild
Unit Weight0.002402 oz
RoHS Details
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMS86101
Product CategoryMOSFET
Pd - Power Dissipation2.5 W
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
DescriptionMOSFET 100/20V Nch Power Trench
TradenamePowerTrench
Number of Channels1 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)