参数项参数值
参数项参数值
Forward Transconductance - Min7.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2.7 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5.4 ns
Rds On - Drain-Source Resistance116 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.8 ns
Width1.3 mm
Height1.1 mm
MXHTS85412999
Length2.9 mm
KRHTS8541299000
Qg - Gate Charge2.5 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time4.2 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRLML0060TRPBF
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1.25 W
BrandInfineon / IR
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 60V 2.7A 92mOhm 2.5nC Qg
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
Number of Channels1 Channel
Rise Time6.3 ns
Moisture Sensitivity Level1 (Unlimited)