参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.2 ns
Rds On - Drain-Source Resistance6 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time5.9 ns
Height1.2 mm
Width1.3 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge793 pC
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Fall Time5.6 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation360 mW
SeriesBSS123L
BrandON Semiconductor / Fairchild
ImageON Semiconductor / Fairchild BSS123L
ManufacturerON Semiconductor
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage100 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
Rise Time1.7 ns
DescriptionMOSFET Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23
Moisture Sensitivity Level1 (Unlimited)