参数项参数值
参数项参数值
Forward Transconductance - Min1.77 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current2.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
MXHTS85412999
Transistor Type1 P-Channel
Typical Turn-Off Delay Time65 ns
Width3.5 mm
Height1.57 mm
Length6.5 mm
KRHTS8541299000
Qg - Gate Charge14.3 nC
Package / CaseSOT-223-3
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time38 ns
ImageON Semiconductor NTF2955T1G
TARIC8541290000
RoHS Details
Factory Pack Quantity1000
SeriesNTF2955
Unit Weight0.008818 oz
ManufacturerON Semiconductor
BrandON Semiconductor
DescriptionMOSFET -60V 2.6A P-Channel
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation2.3 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time7.6 nS
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)