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FDN5618P
厂牌：ONSEMI
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041659352
描述：Trans MOSFET P-CH 60V 1.25A 3-Pin SuperSOT T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min4.3 S
ConfigurationSingle
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current1.2 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.5 ns
Width1.4 mm
Rds On - Drain-Source Resistance170 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time16.5 ns
Height1.12 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Qg - Gate Charge13.8 nC
Package / CaseSSOT-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ProductMOSFET Small Signal
TARIC8541210000
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
ImageON Semiconductor / Fairchild FDN5618P
Channel ModeEnhancement
BrandON Semiconductor / Fairchild
Fall Time8 ns
Product TypeMOSFET
SeriesFDN5618P
ManufacturerON Semiconductor
USHTS8541210095
Unit Weight0.001058 oz
Factory Pack Quantity3000
Product CategoryMOSFET
DescriptionMOSFET SSOT-3 P-CH 60V
Pd - Power Dissipation500 mW
TradenamePowerTrench
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time8 ns
TypeMOSFET