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参数项参数值
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs90mOhm @ 20A, 15V
FET Feature-
Power Dissipation (Max)113.6W (Tc)
Vgs(th) (Max) @ Id4V @ 5mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)+19V, -8V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 1000 V