在线商城 
商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current10 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width4.83 mm
Height15.75 mm
MXHTS85412999
Length10.53 mm
CNHTS8541290000
Collector-Emitter Saturation Voltage1 V
KRHTS8541299000
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-220-3
PackagingTube
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
ManufacturerON Semiconductor
TARIC8541290000
RoHS Details
SubcategoryTransistors
ImageON Semiconductor D44H11G
Factory Pack Quantity50
SeriesD44H11
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 10A 80V 50W NPN
USHTS8541290075
Unit Weight0.211644 oz
Pd - Power Dissipation70 W
Moisture Sensitivity LevelNot Applicable