参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.7 V
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
JPHTS8541290100
CAHTS8541290000
Vgs - Gate-Source Voltage- 15 V, + 15 V
QualificationAEC-Q101
ImageNexperia BUK9Y4R8-60E,115
Typical Turn-On Delay Time28 ns
DescriptionMOSFET N-channel 60 V 4.8 mo FET
Rds On - Drain-Source Resistance3.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Product CategoryMOSFET
Package / CaseLFPAK56-5
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity1500
Mounting StyleSMD/SMT
BrandNexperia
Product TypeMOSFET
RoHS Details
TARIC8541290000
MXHTS85412999
Qg - Gate Charge50 nC
ManufacturerNexperia
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002996 oz
Fall Time47 ns
CNHTS8541290000
Part # Aliases934067017115
Pd - Power Dissipation238 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time53 ns