DMT10H015LSS-13

厂牌：DIODES INC.

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000041724292

描述：Trans MOSFET N-CH 100V 8.3A Automotive 8-Pin SO T/R

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current8.3 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

MXHTS85412999

Width3.95 mm

Typical Turn-On Delay Time6.5 ns

Length4.95 mm

Height1.5 mm

KRHTS8541299000

CNHTS8541290000

Rds On - Drain-Source Resistance16 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time19.7 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Package / CaseSO-8

Mounting StyleSMD/SMT

Qg - Gate Charge33.3 nC

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

RoHS Details

BrandDiodes Incorporated

Product CategoryMOSFET

Factory Pack Quantity2500

ImageDiodes Incorporated DMT10H015LSS-13

TARIC8541290000

Product TypeMOSFET

SeriesDMT10

ManufacturerDiodes Incorporated

DescriptionMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W

SubcategoryMOSFETs

Channel ModeEnhancement

Fall Time8.1 ns

Unit Weight0.002610 oz

USHTS8541290095

Pd - Power Dissipation1.2 W

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time7 ns