参数项参数值
参数项参数值
Forward Transconductance - Min2.3 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current1.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time1.8 ns
Width1.4 mm
Rds On - Drain-Source Resistance250 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time4.9 ns
Height1.02 mm
Length3.04 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge3.2 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
ProductMOSFET Small Signal
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXMN6A07
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 60V N-Chnl UMOS
TARIC8541210000
ImageDiodes Incorporated ZXMN6A07FTA
Product CategoryMOSFET
RoHS Details
Unit Weight0.001093 oz
SubcategoryMOSFETs
Pd - Power Dissipation625 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time1.4 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)