参数项参数值
参数项参数值
PackagingTube
Package / CaseTO-3PFM, SC-93-3
Mounting TypeThrough Hole
Operating Temperature175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.7A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.1A, 18V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id4V @ 900µA
Supplier Device PackageTO-3PFM
Part StatusActive
Drive Voltage (Max Rds On, Min Rds On)18V
Vgs (Max)+22V, -6V
Drain to Source Voltage (Vdss)1700 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds184 pF @ 800 V
Moisture Sensitivity Level1 (Unlimited)