RZM001P02T2L

RZM001P02T2L

厂牌：ROHM

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000041747562

描述：Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min120 mS

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage- 1 V

TechnologySi

Id - Continuous Drain Current100 mA

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

Typical Turn-On Delay Time46 ns

Rds On - Drain-Source Resistance3.8 Ohms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time325 ns

Width0.9 mm

Height0.55 mm

Length1.3 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge-

Package / CaseSOT-723-3

Mounting StyleSMD/SMT

JPHTS8541290100

Minimum Operating Temperature- 55 C

CAHTS8541290000

Maximum Operating Temperature+ 150 C

Channel ModeEnhancement

ProductMOSFET

CNHTS8541290000

Fall Time137 ns

PackagingReel

PackagingMouseReel

PackagingCut Tape

TARIC8541290000

RoHS Details

ImageROHM Semiconductor RZM001P02T2L

Unit Weight0.000282 oz

Factory Pack Quantity8000

SeriesRZM001P02

BrandROHM Semiconductor

Pd - Power Dissipation150 mW

Product TypeMOSFET

Part # AliasesRZM001P02

Product CategoryMOSFET

ManufacturerROHM Semiconductor

SubcategoryMOSFETs

DescriptionMOSFET 1.2V Drive Pch MOSFET

Vds - Drain-Source Breakdown Voltage20 V

USHTS8541290095

Number of Channels1 Channel

Rise Time62 ns

TypeSmall Signal MOSFET

Moisture Sensitivity Level1 (Unlimited)