参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current12.5 A
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time19 ns
Width6.22 mm
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge16.4 nC
Mounting StyleSMD/SMT
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Moisture SensitiveYes
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2500
CNHTS8541290000
DescriptionMOSFET CONSUMER
BrandInfineon Technologies
Channel ModeEnhancement
ImageInfineon Technologies IPD70R360P7SAUMA1
Product TypeMOSFET
SeriesCoolMOS P7
TARIC8541290000
Fall Time18 ns
ManufacturerInfineon
Product CategoryMOSFET
RoHS Details
Unit Weight0.034216 oz
SubcategoryMOSFETs
Part # AliasesIPD70R360P7S SP001491634
Pd - Power Dissipation59.5 W
USHTS8541290095
TradenameCoolMOS
Vds - Drain-Source Breakdown Voltage700 V
Number of Channels1 Channel
Rise Time8 ns
Moisture Sensitivity Level3 (168 Hours)