参数项参数值
参数项参数值
Gate-Emitter Leakage Current100 nA
Maximum Gate Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max650 V
TechnologySi
ConfigurationSingle
Collector-Emitter Saturation Voltage1.65 V
SeriesIGBT 7
Factory Pack Quantity240
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 40 C
PackagingTube
TARIC8541290000
RoHS Details
ImageInfineon Technologies IKW30N65ET7XKSA1
BrandInfineon Technologies
Product TypeIGBT Transistors
ManufacturerInfineon
Continuous Collector Current at 25 C60 A
Product CategoryIGBT Transistors
SubcategoryIGBTs
Pd - Power Dissipation188 W
DescriptionIGBT Transistors
USHTS8541290095
Part # AliasesIKW30N65ET7 SP005348289
TradenameTRENCHSTOP
Moisture Sensitivity Level1 (Unlimited)