在线商城 
IMZ120R030M1HXKSA1
厂牌：Infineon
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041749470
描述：Infineon IMZ120R030M1HXKSA1
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min14 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5.7 V
TechnologySiC
Id - Continuous Drain Current56 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 7 V, + 23 V
Typical Turn-On Delay Time7.7 ns
Rds On - Drain-Source Resistance40 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time17.3 ns
Qg - Gate Charge63 nC
Mounting StyleThrough Hole
Package / CaseTO-247-4
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
BrandInfineon Technologies
Factory Pack Quantity240
ManufacturerInfineon
Channel ModeEnhancement
SeriesIMZ120R030
TARIC8541290000
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET SIC DISCRETE
ImageInfineon Technologies IMZ120R030M1HXKSA1
Fall Time11.5 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.217417 oz
Part # AliasesIMZ120R030M1H SP001727394
USHTS8541290095
Pd - Power Dissipation227 W
TradenameCoolSiC
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time11.6 ns
Moisture Sensitivity LevelNot Applicable