参数项参数值
参数项参数值
Forward Transconductance - Min85 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance1.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time54 ns
Qg - Gate Charge143 nC
Package / CaseTSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time31 ns
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.004375 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation214 W
ImageInfineon Technologies BSC012N06NSATMA1
Part # AliasesBSC012N06NS SP001645312
SeriesBSC012N
Factory Pack Quantity5000
BrandInfineon Technologies
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
Product TypeMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
TradenameOptiMOS 5
Rise Time15 ns
DescriptionMOSFET TRENCH 40<-<100V
USHTS8541290095