参数项参数值
参数项参数值
Forward Transconductance - Min60 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance4 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge58 nC
KRHTS8541299000
Package / CasePG-TDSON-8
Mounting StyleSMD/SMT
Development KitEVAL_1K4W_ZVS_FB_CFD7
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time10 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.017870 oz
RoHS Details
SeriesOptiMOS 5
Pd - Power Dissipation139 W
BrandInfineon Technologies
Part # AliasesBSC040N10NS5 SP001295030
ImageInfineon Technologies BSC040N10NS5ATMA1
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage100 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time9 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 100V 100A TDSON-8
Moisture Sensitivity Level1 (Unlimited)