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IRF540NSTRRPBF
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041759375
描述：MOSFET N-CH 100V 33A D2PAK
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min21 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current33 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
Width9.25 mm
Rds On - Drain-Source Resistance44 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge47.3 nC
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRF540NSTRRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time35 ns
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity800
Product CategoryMOSFET
Unit Weight0.139332 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC
Pd - Power Dissipation3.8 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time35 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)