参数项参数值
参数项参数值
Forward Transconductance - Min6.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current5.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.6 ns
Width3.7 mm
Height1.65 mm
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length6.7 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZXMN6A08GTA
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time4.6 ns
SeriesZXMN6A
SubcategoryMOSFETs
Factory Pack Quantity1000
Product CategoryMOSFET
BrandDiodes Incorporated
Product TypeMOSFET
Unit Weight0.003951 oz
DescriptionMOSFET 60V 3.8A N-Channel MOSFET
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation3.9 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time2.1 ns
Moisture Sensitivity Level1 (Unlimited)