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IPB020N10N5LFATMA1
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041877180
描述：Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min124 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time33 ns
Rds On - Drain-Source Resistance1.7 mOhms
MXHTS85412999
Transistor Type1 N-Channel
Typical Turn-Off Delay Time77 ns
KRHTS8541299000
Qg - Gate Charge210 nC
CNHTS8541290000
Package / CaseD2PAK-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time29 ns
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPB020N10N5LFATMA1
SeriesOptiMOS 5
Factory Pack Quantity1000
BrandInfineon Technologies
Product TypeMOSFET
Unit Weight0.055115 oz
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET DIFFERENTIATED MOSFETS
Pd - Power Dissipation375 W
Part # AliasesIPB020N10N5LF SP001503854
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time26 ns
Moisture Sensitivity Level1 (Unlimited)