参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Minimum Operating Temperature- 55 C
Transistor PolarityP-Channel
Id - Continuous Drain Current3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
ImageSTMicroelectronics STN3P6F6
Typical Turn-On Delay Time6.4 ns
Product CategoryMOSFET
Rds On - Drain-Source Resistance160 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time14 ns
DescriptionMOSFET P-Ch 60 V, 0.13 Ohm 3 A STripFET VI
Package / CaseSOT-223-4
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity4000
Mounting StyleSMD/SMT
RoHS Details
BrandSTMicroelectronics
Qg - Gate Charge6.4 nC
ManufacturerSTMicroelectronics
Product TypeMOSFET
SeriesSTN3P6F6
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time3.7 ns
Unit Weight0.008818 oz
Pd - Power Dissipation2.6 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.3 ns
TypeP Channel Power MOSFET
Moisture Sensitivity Level1 (Unlimited)