参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.8 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current180 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time62 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
RoHS Details
Rds On - Drain-Source Resistance2.5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time148 ns
Factory Pack Quantity1000
Package / CaseH2PAK-2
ImageSTMicroelectronics STH310N10F7-2
BrandSTMicroelectronics
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerSTMicroelectronics
Maximum Operating Temperature+ 175 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET N-CH 100V 2.1mOhm 180A STripFET VI
Qg - Gate Charge180 nC
MXHTS85412999
Product TypeMOSFET
SeriesSTH310N10F7-2
USHTS8541290095
Unit Weight0.139332 oz
Fall Time40 ns
CNHTS8541210000
Pd - Power Dissipation315 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time108 ns
Moisture Sensitivity Level1 (Unlimited)