参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.4 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
CNHTS8541290000
Typical Turn-On Delay Time5.3 ns
MXHTS85423901
Rds On - Drain-Source Resistance20 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15.1 ns
JPHTS8542390990
Minimum Operating Temperature- 55 C
CAHTS8542390000
Mounting StyleSMD/SMT
Package / CaseDFN-2020-6
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge19.1 nC
BrandDiodes Incorporated
TARIC8542399000
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN4020LFDE-7
Product CategoryMOSFET
RoHS Details
SeriesDMN40
DescriptionMOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF
Product TypeMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time4.8 ns
USHTS8542390001
Unit Weight0.687842 oz
Pd - Power Dissipation2.03 W
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time7.1 ns
Moisture Sensitivity Level1 (Unlimited)