MJE13007G

厂牌：安森美(onsemi)

包装：TUBE 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000041914850

描述：Trans GP BJT NPN 400V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube

商品参数

参数项参数值

Gain Bandwidth Product fT14 MHz

Collector- Base Voltage VCBO700 V

Maximum DC Collector Current8 A

Collector- Emitter Voltage VCEO Max400 V

Continuous Collector Current8 A

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO9 V

MXHTS85412999

Length10.53 mm

Width4.83 mm

Height15.75 mm

KRHTS8541299000

Collector-Emitter Saturation Voltage1 V

DC Collector/Base Gain hfe Min8

Minimum Operating Temperature- 65 C

JPHTS8541290100

Package / CaseTO-220-3

CAHTS8541290000

CNHTS8541210000

Mounting StyleThrough Hole

Maximum Operating Temperature+ 150 C

Factory Pack Quantity50

PackagingTube

ImageON Semiconductor MJE13007G

BrandON Semiconductor

Product CategoryBipolar Transistors - BJT

RoHS Details

TARIC8541290000

DescriptionBipolar Transistors - BJT 8A 400V 80W NPN

SeriesMJE13007

Product TypeBJTs - Bipolar Transistors

ManufacturerON Semiconductor

SubcategoryTransistors

Unit Weight0.211644 oz

USHTS8541290095

Pd - Power Dissipation80 W

Moisture Sensitivity LevelNot Applicable