参数项参数值
参数项参数值
Forward Transconductance - Min120 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.9 V
TechnologySi
Id - Continuous Drain Current265 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance950 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time64 ns
Width5 mm
MXHTS85412999
Height0.83 mm
Length6 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge127 nC
Package / CasePQFN-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time34 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon / IR
RoHS Details
ImageInfineon / IR IRFH7084TRPBF
Product CategoryMOSFET
Unit Weight0.005943 oz
ManufacturerInfineon
SubcategoryMOSFETs
Factory Pack Quantity4000
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET MOSFET N-CH 40V 100A PQFN
Vds - Drain-Source Breakdown Voltage40 V
TradenameStrongIRFET
Number of Channels1 Channel
Rise Time31 ns
Moisture Sensitivity Level1 (Unlimited)