参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current11 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage1.8 V
Rds On - Drain-Source Resistance265 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time4 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Height2.3 mm
Width6.22 mm
Length6.5 mm
MXHTS85412999
Maximum Operating Temperature+ 175 C
KRHTS8541299000
Qg - Gate Charge20 nC
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC
JPHTS8541290100
Package / CaseTO-252-3
Channel ModeEnhancement
Mounting StyleSMD/SMT
CNHTS8541290000
Fall Time22 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRLR120NTRPBF
RoHS Details
TARIC8541290000
Unit Weight0.139332 oz
Product TypeMOSFET
Pd - Power Dissipation48 W
Factory Pack Quantity2000
BrandInfineon / IR
TypeHEXFET Power MOSFET
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel
Rise Time35 ns
Moisture Sensitivity Level1 (Unlimited)