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IPB031N08N5ATMA1
厂牌：Infineon
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000041969548
描述：Infineon MOSFET IPB031N08N5ATMA1
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min76 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance2.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Width9.25 mm
Height4.4 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge87 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time12 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPB031N08N5ATMA1
Unit Weight0.139332 oz
SeriesOptiMOS 5
Factory Pack Quantity1000
Pd - Power Dissipation167 W
BrandInfineon Technologies
Product TypeMOSFET
Part # AliasesIPB031N08N5 SP001227048
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET N-Ch 80V 120A D2PAK-2
Vds - Drain-Source Breakdown Voltage80 V
USHTS8541290095
TradenameOptiMOS
Number of Channels1 Channel
Rise Time18 ns
Moisture Sensitivity Level1 (Unlimited)