参数项参数值
参数项参数值
Forward Transconductance - Min1.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current800 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time1.8 ns
Width1.4 mm
Height1.02 mm
Rds On - Drain-Source Resistance700 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time4.1 ns
MXHTS85412999
Length3.04 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge2.9 nC
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
ImageDiodes Incorporated ZXMN10A07FTA
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time2.1 ns
SeriesZXMN10A07
Factory Pack Quantity3000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000282 oz
Product TypeMOSFET
DescriptionMOSFET 100V N-Chnl UMOS
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation806 mW
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time1.5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)