参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Width1.3 mm
Transistor PolarityN-Channel
Id - Continuous Drain Current4.6 A
Vgs - Gate-Source Voltage- 10 V, + 10 V
Height1 mm
Typical Turn-On Delay Time3.41 ns
MXHTS85412101
Length2.9 mm
CNHTS8541290000
Rds On - Drain-Source Resistance28 mOhms
KRHTS8541219000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13.92 ns
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
ProductMOSFET Small Signal
Package / CaseSOT-23-3
PackagingReel
PackagingCut Tape
PackagingMouseReel
Qg - Gate Charge11.3 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMN3404L-7
Factory Pack Quantity3000
SeriesDMN3404
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET N-CHANNEL ENHANCEMENT MODE
Channel ModeEnhancement
Fall Time2.84 ns
USHTS8541210095
Unit Weight0.001023 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6.18 ns