参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current200 mA
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns, 5 ns
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time17 ns, 17 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
CNHTS8541210000
BrandROHM Semiconductor
DescriptionMOSFET 10V Drive N Ch MOSFET
Channel ModeEnhancement
Product TypeMOSFET
ImageROHM Semiconductor UM6K34NTCN
SeriesUM6K34N
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryMOSFET
Fall Time43 ns, 43 ns
RoHS Details
Unit Weight0.000265 oz
SubcategoryMOSFETs
Part # AliasesUM6K34N
Pd - Power Dissipation150 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels2 Channel
Rise Time8 ns, 8 ns