SQD40020EL_GE3

厂牌：VISHAY

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000042054474

描述：MOSFET AEC-Q101 N-CH 40V TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00178ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:107W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175蚓; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

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商品参数

参数项参数值

Forward Transconductance - Min115 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Id - Continuous Drain Current100 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance4.2 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time50 ns

Qg - Gate Charge108 nC

CNHTS8541290000

Package / CaseTO-252-3

Mounting StyleSMD/SMT

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

Fall Time20 ns

TARIC8541290000

RoHS Details

ImageVishay / Siliconix SQD40020EL_GE3

SeriesSQ

BrandVishay / Siliconix

Product TypeMOSFET

ManufacturerVishay

Product CategoryMOSFET

SubcategoryMOSFETs

Pd - Power Dissipation107 W

DescriptionMOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET

USHTS8541290095

Vds - Drain-Source Breakdown Voltage40 V

TradenameTrenchFET

Number of Channels1 Channel

Rise Time10 ns