参数项参数值
参数项参数值
ConfigurationSingle
BrandNexperia
Factory Pack Quantity3000
Transistor PolarityP-Channel
Id - Continuous Drain Current1.5 A
TechnologySi
PackagingCut Tape
PackagingMouseReel
PackagingReel
Vgs th - Gate-Source Threshold Voltage1 V
Height1.1 mm
Length3 mm
Maximum Operating Temperature+ 150 C
Rds On - Drain-Source Resistance240 mOhms
Transistor Type1 P-Channel Trench MOSFET
Typical Turn-Off Delay Time26 ns
TARIC8541210000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Mounting StyleSMD/SMT
ProductMOSFET
Typical Turn-On Delay Time4 ns
Minimum Operating Temperature- 55 C
RoHS Details
JPHTS8541210101
Package / CaseSOT-23-3
ImageNexperia PMV250EPEAR
SubcategoryMOSFETs
KRHTS8541219000
CAHTS8541210000
ManufacturerNexperia
Width1.4 mm
Product TypeMOSFET
Qg - Gate Charge4.7 nC
Product CategoryMOSFET
MXHTS85412101
DescriptionMOSFET 40V P-channel Trench MOSFET
USHTS8541210075
Channel ModeEnhancement
Unit Weight0.000917 oz
CNHTS8541210000
Fall Time14 ns
Part # Aliases934067624215
Pd - Power Dissipation890 mW
TypeTrench MOSFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)