参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 1 mA, 5 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Length3 mm
Height1 mm
QualificationAEC-Q101
PackagingCut Tape
PackagingMouseReel
PackagingReel
KRHTS8541219000
Minimum Operating Temperature- 65 C
JPHTS8541210101
Factory Pack Quantity3000
ManufacturerNexperia
CAHTS8541210000
Package / CaseSOT-23-3
BrandNexperia
DC Collector/Base Gain hfe Min300 at 1 mA, 5 V, 300 at 500 mA, 5 V, 200 at 1 A, 5 V
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.4 mm
Mounting StyleSMD/SMT
RoHS Details
ImageNexperia PBSS4140T,215
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN 40V 1000MA
MXHTS85412101
Product TypeBJTs - Bipolar Transistors
USHTS8541210075
Unit Weight0.035274 oz
CNHTS8541210000
Part # Aliases934056515215
Pd - Power Dissipation450 mW
Moisture Sensitivity Level1 (Unlimited)