SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

厂牌：VISHAY

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000042124954

描述：MOSFET N-CH 60V 2.3A SOT23-3MOSFET 60V Vds 20V Vgs SOT-23

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min5 s

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current2.3 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

JPHTS8541290100

Typical Turn-On Delay Time4 ns

CAHTS8541290000

Rds On - Drain-Source Resistance156 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time10 ns

Package / CaseSOT-23-3

RoHS Details

ImageVishay Semiconductors SI2308BDS-T1-GE3

Factory Pack Quantity3000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

DescriptionMOSFET 60V Vds 20V Vgs SOT-23

Qg - Gate Charge6.8 nC

MXHTS85412999

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time7 ns

CNHTS8541210000

Part # AliasesSI2308BDS-GE3

Pd - Power Dissipation1.66 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Rise Time10 ns