参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
ConfigurationSingle
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Height2.38 mm
MXHTS85412999
KRHTS8541299000
Collector-Emitter Saturation Voltage1.2 V
DC Collector/Base Gain hfe Min25
Length6.73 mm
Factory Pack Quantity2500
Width6.22 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8541290100
Minimum Operating Temperature- 65 C
Package / CaseTO-252-3
CAHTS8541290000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageON Semiconductor / Fairchild MJD32CT4G
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor / Fairchild
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - BJT 3A 100V 15W PNP
Product TypeBJTs - Bipolar Transistors
SeriesMJD32C
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.035274 oz
USHTS8541290095
Pd - Power Dissipation1.56 W
Moisture Sensitivity Level1 (Unlimited)