参数项参数值
参数项参数值
Forward Transconductance - Min85 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time48 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge168 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time19 ns
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003880 oz
RoHS Details
Pd - Power Dissipation96 W
BrandInfineon Technologies
Part # AliasesBSC009NE2LS SP000893362
ImageInfineon Technologies BSC009NE2LSATMA1
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage25 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time33 ns
TradenameOptiMOS
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOS