参数项参数值
参数项参数值
Forward Transconductance - Min50 S
Vgs th - Gate-Source Threshold Voltage3.8 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance5 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
Qg - Gate Charge61 nC
Package / CaseTDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time7 ns
CNHTS8541290000
PackagingReel
PackagingCut Tape
Unit Weight0.020184 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation136 W
ImageInfineon Technologies BSC050N10NS5ATMA1
Part # AliasesBSC050N10NS5 SP001861032
Factory Pack Quantity5000
BrandInfineon Technologies
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage100 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
Rise Time9 ns
DescriptionMOSFET TRENCH >=100V
USHTS8541290075