参数项参数值
参数项参数值
Forward Transconductance - Min24 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current40 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance8.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16 ns
Width3.3 mm
Height1.1 mm
Length3.3 mm
Qg - Gate Charge24 nC
Package / CaseTSDSON-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time2.8 ns
RoHS Details
SeriesOptiMOS 3
BrandInfineon Technologies
ImageInfineon Technologies BSZ097N04LSGATMA1
Unit Weight0.005326 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation35 W
Part # AliasesBSZ097N04LS G SP000388296
DescriptionMOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3
Vds - Drain-Source Breakdown Voltage40 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time2.4 ns