参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min9.5 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage4 V
Transistor PolarityP-Channel
Id - Continuous Drain Current38 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
JPHTS8541290100
Height2.3 mm
Length6.5 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time14 ns
Product CategoryMOSFET
ImageInfineon / IR AUIRF5210STRL
Rds On - Drain-Source Resistance60 mOhms
Typical Turn-Off Delay Time72 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-252-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionMOSFET Automotive MOSFET P 38A 150nC D2Pak
Width6.22 mm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerInfineon
Product TypeMOSFET
BrandInfineon / IR
Qg - Gate Charge150 nC
Factory Pack Quantity800
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time55 ns
Unit Weight0.139332 oz
CNHTS8541290000
Pd - Power Dissipation3.1 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time63 ns
Moisture Sensitivity Level1 (Unlimited)