参数项参数值
参数项参数值
Forward Transconductance - Min13 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current25 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 5 V, + 5 V
Typical Turn-On Delay Time9 ns
MXHTS85412999
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time15 ns
Width6.22 mm
Height2.38 mm
Length6.73 mm
KRHTS8541299000
Qg - Gate Charge15 nC
Package / CaseTO-252-4
CNHTS8541290000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time16 ns
ImageON Semiconductor NTD25P03LT4G
TARIC8541290000
RoHS Details
Factory Pack Quantity2500
SeriesNTD25P03L
Unit Weight0.139332 oz
ManufacturerON Semiconductor
BrandON Semiconductor
Product TypeMOSFET
DescriptionMOSFET -30V -25A P-Channel
Product CategoryMOSFET
Pd - Power Dissipation75 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time37 ns
TypeMOSFET