参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min85 S
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
KRHTS8541299000
Minimum Operating Temperature- 55 C
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
JPHTS8541290100
CAHTS8541290000
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length5.9 mm
ImageInfineon Technologies BSC026N04LSATMA1
Height1.27 mm
Typical Turn-On Delay Time5 ns
DescriptionMOSFET TRENCH <= 40V
Rds On - Drain-Source Resistance2.1 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
Product CategoryMOSFET
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
BrandInfineon Technologies
RoHS Details
Product TypeMOSFET
TARIC8541290000
MXHTS85412999
Qg - Gate Charge45 nC
ManufacturerInfineon
SeriesOptiMOS 5
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.004167 oz
Fall Time4 ns
CNHTS8541290000
Part # AliasesBSC026N04LS SP001067014
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time4 ns